High-Performance Solar Cells Systems with ZnO+ Spiro-OMeTAD Perovskite- NiO layers

Document Type : Original Article

Authors

1 Department of solid state Physics, University of Mazandaran, Babolsar, Iran

2 Department of Applied Medical Physics, University of Hilla, Babylon, Iraq

10.22075/ppam.2025.40003.1190

Abstract

Achieving a suitable electron-transporting layer for balancing electron- hole numbers, and the accumulation of electrical charges at HTL/anode interface layer, remains a key challenge for perovskite-organic solar cells (PSC) application. Here, ZnO, NiO, and spiro- OMeTAD (SOT) as electron-transporting layers (ETLs)/ perovskite/ SOT as hole-transporting layers (HTLs) of PSC have been widely analyzed. To find better ETL- materials in PSCP systems for balancing the difference between electron- hole (e-h) diffusion distance, and acting as a hole barrier material for  reducing the recombination ratio  of e - h at the active layer, Al (cathode), ZnO/NiO+10wt.% SOT as ETL, perovskite-SOT as the active layer, and SOT as HTL and anode layer of PSCP systems are investigated with the help of relevant spectroscopic techniques, home- set electrical systems, ABET Technologies, Sun 2000 solar simulator, and microscopic images. In the ETL layer, ZnO/10% wt. of SOT with zero, 25, 50, 75, and 100 wt.% of NiO particles, shows that sample with 75% NiO particles, with higher carrier mobility (62.5 cm2/V.S), higher power conversion efficiency (PCE= 8.3%), higher fill factor (FF=67%), lower hysteresis loop, and lower SS (1.3 mV/dec.) can be used as desirable ETL for the next PSCP systems.

Keywords

Main Subjects

© 2026 The Author(s). Progress in Physics of Applied Materials published by Semnan University Press. This is an open access article under the CC-BY 4.0 license. (https://creativecommons.org/licenses/by/4.0/)

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Progress in Physics of Applied Materials
Volume 6, Issue 3 - Serial Number 12
In Progress
October 2026
Pages 205-215

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History

  • Receive Date: 09 December 2025
  • Revise Date: 25 December 2025
  • Accept Date: 26 December 2025

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