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    <title>Progress in Physics of Applied Materials</title>
    <link>https://ppam.semnan.ac.ir/</link>
    <description>Progress in Physics of Applied Materials</description>
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    <pubDate>Thu, 01 Oct 2026 00:00:00 +0330</pubDate>
    <lastBuildDate>Thu, 01 Oct 2026 00:00:00 +0330</lastBuildDate>
    <item>
      <title>Multifunctional Dye Interlayer Enhances the Power Conversion Efficiency of Cs2AgBiBr6 Lead-Free Inorganic Perovskite Solar Cell in a SCAPS-1D Simulation</title>
      <link>https://ppam.semnan.ac.ir/article_10424.html</link>
      <description>This study presents a simple, yet efficient method for improving the performance of Cs2AgBiBr6 perovskite solar cells (PSCs) by adding a N719 dye as an interlayer between the absorber and the hole transport layer (HTL). This was achieved through device simulation using solar capacitance simulation software in one dimension (SCAPS-1D), which based on Poisson and continuity equations. The presence of the N719 dye promotes faster hole extraction, improves energy level alignment within the device structure, decreases charge carrier recombination, and increases the range of light absorption. The open circuit voltage (Voc), current density (Jsc), fill factor (FF), and power conversion efficiency (PCE) of the pure Cs2AgBiBr6-based device were 0.81V, 7.61 mA/cm2, 46.68%, and 2.89%, respectively, whereas the Voc, Jsc, FF, and PCE of the N719 modified Cs2AgBiBr6 device were 1.15 V, 8.05 mA/cm2, 59.89%, and 5.53% respectively. Consequently, optimizing the electron transport layer (ETL) ND, ETL Nt, absorber layer band gap, thickness, and absorber Nt, to obtain the optimal values of 1020 cm-3, 1015 cm-2, 1.9 eV, 0.4 &amp;amp;mu;m, and 1011 cm-2, respectively, led to achieve a remarkable PCE of 14.09%, which is a notable improvement over the Cs2AgBiBr6-based perovskite solar cells that have been previously documented in the literature.&amp;amp;nbsp;</description>
    </item>
    <item>
      <title>PC1D Modelling of the Impact of Layer Thickness, Doping Concentration, and Operating Temperature on InGaN Solar Cells</title>
      <link>https://ppam.semnan.ac.ir/article_10427.html</link>
      <description>In this research, indium gallium nitride (InGaN), gallium nitride (GaN), and silicon (Si) were combined to develop a heterojunction solar cell with optimal results using the Personal Computer One Dimensional (PC1D) simulation. This research investigates the impact of structural and design parameters, specifically; thickness and doping, on the performance of InGaN solar cells. The electrical properties of these solar cells were examined to determine their optimum conditions. Based on the findings, appropriate layer thickness, doping concentration, and operation temperature, all together contribute to enhance electron mobility and solar cell efficiency (&amp;amp;eta;). The quantum efficiency at the highest temperature is the lowest among all the temperatures, resulting in poor photon absorption. Furthermore, &amp;amp;eta; decreases with increasing temperature, from 25.13% at 300 K to 6.04% at 550 K. The InGaN solar cells demonstrated a short-circuit current (Isc) of 39.45 mA/cm&amp;amp;sup2;, an open-circuit voltage (Voc) of 0.7464 V, a maximum power output (Pmax) of 0.2529 W, a fill factor (FF) of 85.89%, and an efficiency of 25.29%, showing improvements compared to previous works.</description>
    </item>
    <item>
      <title>High-Performance Solar Cells Systems with ZnO+ Spiro-OMeTAD Perovskite- NiO layers</title>
      <link>https://ppam.semnan.ac.ir/article_10447.html</link>
      <description>Achieving a suitable electron-transporting layer for balancing electron- hole numbers, and the accumulation of electrical charges at HTL/anode interface layer, remains a key challenge for perovskite-organic solar cells (PSC) application. Here, ZnO, NiO, and spiro- OMeTAD (SOT) as electron-transporting layers (ETLs)/ perovskite/ SOT as hole-transporting layers (HTLs) of PSC have been widely analyzed. To find better ETL- materials in PSCP systems for balancing the difference between electron- hole (e-h) diffusion distance, and acting as a hole barrier material for&amp;amp;nbsp; reducing the recombination ratio&amp;amp;nbsp; of e - h at the active layer, Al (cathode), ZnO/NiO+10wt.% SOT as ETL, perovskite-SOT as the active layer, and SOT as HTL and anode layer of PSCP systems are investigated with the help of relevant spectroscopic techniques, home- set electrical systems, ABET Technologies, Sun 2000 solar simulator, and microscopic images. In the ETL layer, ZnO/10% wt. of SOT with zero, 25, 50, 75, and 100 wt.% of NiO particles, shows that sample with 75% NiO particles, with higher carrier mobility (62.5 cm2/V.S), higher power conversion efficiency (PCE= 8.3%), higher fill factor (FF=67%), lower hysteresis loop, and lower SS (1.3 mV/dec.) can be used as desirable ETL for the next PSCP systems.</description>
    </item>
    <item>
      <title>Quantum Capacitance Enhancement of AlN Nanoribbon Via Transition Metal Doping: Density Functional Study</title>
      <link>https://ppam.semnan.ac.ir/article_10490.html</link>
      <description>First-principles density-functional calculations are used to explore the influence of transition-metal dopants (Sc, Ti, V, Mn, Fe, Co) on the electronic structure, stability and quantum capacitance (QC) of zig-zag AlN nanoribbons. Substitutional doping at either the edge or center of the ribbon is found to introduce mid-gap states that markedly increase the density of states near the Fermi level, yielding up to a 40-fold enhancement in QC related to the pristine lattice. Vanadium-doped configurations possess the highest cohesive energy (&amp;amp;minus;5.85 eV per atom) and the largest surface-charge density (40 &amp;amp;micro;C cm⁻&amp;amp;sup2; at +0.6 V vs &amp;amp;minus;0.6 V), identifying them as optimal anode materials. Conversely, cobalt-rich ribbons deliver superior cathodic capacity, whereas Mn-doped systems exhibit almost symmetric charge storage. Phonon spectra confirm dynamic stability for all considered dopants. The results provide quantitative design rules for tailoring of AlN nanoribbons as high-rate, high-capacity electrodes in advanced supercapacitors.</description>
    </item>
    <item>
      <title>Structural and Magnetic Properties of Pb-substituted CuFe2O4 Nanoparticles</title>
      <link>https://ppam.semnan.ac.ir/article_10492.html</link>
      <description>Lead-substituted copper ferrites (Cu1-xPbxFe2O4, x = 0.0&amp;amp;ndash;0.30) were synthesized via a sol&amp;amp;ndash;gel auto-combustion route to explore the structural and magnetic effects of Pb&amp;amp;sup2;⁺ incorporation. X-ray diffraction confirmed a tetragonal spinel phase (I41/amd) for low Pb content, which gradually evolved into a pseudo-cubic structure at higher substitution levels. The lattice parameters increased systematically with Pb doping, indicating lattice expansion and suppression of Jahn&amp;amp;ndash;Teller distortion. FTIR spectra revealed a red shift of both tetrahedral and octahedral metal&amp;amp;ndash;oxygen stretching modes, consistent with elongation of M&amp;amp;ndash;O bonds and partial Pb2+ occupancy of both sites. Magnetic measurements showed soft-ferromagnetic behavior with a notable increase in saturation magnetization (Ms) up to x = 0.25, followed by a decrease at higher Pb levels due to secondary phase formation and lattice strain. The reduction in coercivity (Hc) with Pb content reflects a weakening of magnetocrystalline anisotropy and lattice relaxation. These results highlight the structural flexibility and magnetic tunability of Pb-substituted CuFe2O4, emphasizing the role of large, nonmagnetic cations in controlling spinel ferrite functionality.&amp;amp;nbsp;</description>
    </item>
    <item>
      <title>Influence of Oblique Angle Deposition on the Structural, Optical, and Photocatalytic Performance of TiO₂ Thin Films</title>
      <link>https://ppam.semnan.ac.ir/article_10530.html</link>
      <description>In the present study, TiO₂ thin films were deposited on glass substrates using thermal evaporation technique at oblique angles of 40&amp;amp;deg;, 60&amp;amp;deg;, 70&amp;amp;deg;, and 80&amp;amp;deg; to study the influences of deposition angles on the structural, optical, and photocatalytic properties of the deposited films. FESEM and AFM studies showed increasing deposition angle results in a porous and rough surface morphology. This is attributed to shadowing effects and limited adatom diffusion. The optical transmittance and absorption spectra were recorded using a UV&amp;amp;ndash;Vis spectrophotometer, indicating that films deposited at higher oblique angles exhibited enhanced light transmission and modified absorption behavior. The photocatalytic activity of the TiO₂ thin films was evaluated through methylene orange degradation under UV irradiation. The degradation efficiency was followed in time steps of 30, 60, 90, and 120 min. The results showed that the sample deposited at 60&amp;amp;deg; exhibits the maximum photocatalytic activity. This is regarded as an enhancement due to its optimized surface roughness and increased surface area, improving photon absorption and charge carrier separation.&amp;amp;nbsp;</description>
    </item>
    <item>
      <title>Binder-Free Mesoporous Vanadium Oxide Electrode: Anodic Electrodeposition, Characterization, and Supercapacitor Application</title>
      <link>https://ppam.semnan.ac.ir/article_10531.html</link>
      <description>Mesoporous vanadium oxide (V2O5) was galvanostatically electrodeposited into nickel foam to obtain a binder-free electrode with a three-dimensional (3D) porous structure for supercapacitive performance. The anodic electrodeposition process was performed using an aqueous solution of vanadyl sulfate, which was completed by calcination treatment. XRD and FTIR confirmed the formation of the orthorhombic V2O5 structure, also and FESEM and BET analysis revealed the 3D mesoporous structure of the electrode material. The supercapacitive performance of the fabricated electrode was evaluated using CV, GCD, and EIS examinations in lithium perchlorate electrolyte. The charge storage mechanism involved the intercalation/de-intercalation of lithium ions within the electrode structure, resulting in a vanadium valence shift between V4+/V5+. The prepared electrode showed an acceptable capacitance of 496 F g-1 at a rate of 1 A g-1, a suitable rate performance with a capacitance retention of 36.1%, and good cyclability with a capacitance retention of 85.2% after 2000 cycles. The resulting porous structure shortens the diffusion path of electrolyte ions to the active material, while the removal of the insulating binder reduces its the internal resistance, both of which improve the kinetics of electrochemical reactions. These results demonstrate the promise of vanadium oxide as an advanced electrode material for next-generation high-performance energy storage devices.&amp;amp;nbsp;&amp;amp;nbsp;</description>
    </item>
    <item>
      <title>Synthesis and Investigation of Structural and Magnetic Properties of Double Perovskite PrBaMn₂O₆</title>
      <link>https://ppam.semnan.ac.ir/article_10550.html</link>
      <description>This study presents the synthesis and characterization of the double perovskite compound PrBaMn2O6 was synthesized using a combustion method. Thermogravimetric analysis (TGA) was employed to determine the optimal synthesis temperatures, while sintering was carried out under air to achieve phase purity. The structural and magnetic properties of the material were investigated using X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, field emission scanning electron imaging microscopy (FESEM), vibrating Sample Magnetometry (VSM) and Alternating Current Magnetic Susceptibility (AC susceptibility) analyses. Rietveld refinement using foolproof confirmed a dominant tetragonal structure with space group P4/mmm, accompanied by a minor hexagonal BaMnO₃-type phase. This dual-phase composition introduces lattice strain and partial disorder, which significantly influence the magnetic response. Magnetic measurements at room temperature indicated paramagnetic behavior, suggesting the absence of long-range magnetic ordering. The observed magnetization is attributed to the paramagnetic response of the material, as confirmed by both VSM and AC susceptibility measurements, with the latter revealing a suppressed transition below 200 K due to competing interactions from the secondary phase.</description>
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