Semnan University PressProgress in Physics of Applied Materials2783-47944220240701Gamma-ray and Neutron Shielding Capacity of Glasses with Various Energies and (_ ^241)Am-Be Source103108884510.22075/ppam.2024.33131.1088ENH.Hosseini SarteshniziDepartment t of Physics, Imam Hossein Comprehensive University, Tehran, IranM.EshghiDepartment t of Physics, Imam Hossein Comprehensive University, Tehran, IranJournal Article20240130In this research, we have investigated features of the ionizing radiation shielding of glasses, <br />, in the photon energy of 15 keV to 15 MeV. We have calculated mass attenuation coefficient (MAC) by using the Monte Carlo simulations such as Geant4 tool, XMuDat and XCOM computing programs. In the continuation of the investigation of the protection feature, we have obtained the linear attenuation coefficient (LAC), half-value layer (HVL), tenth-value layer (TVL), and mean free path (MFP). The photon flux passing through the samples in different thicknesses of chosen materials in front of the radioactive source has been shown. At the end, the energy spectrum of neutrons passing have been shown through selected samples and the ratio of transiting neutrons in the presence of samples to the ratio of transiting neutrons in the absence of selected samples and in different thicknesses.https://ppam.semnan.ac.ir/article_8845_7c89ae0f1310572d2a3117a9a64529aa.pdfSemnan University PressProgress in Physics of Applied Materials2783-47944220240701The effect of energy band gap of channel transistor region on npn transistor performance; a numerical study109114884610.22075/ppam.2024.34215.1105ENMohammadKamali MoghaddamHakim Sabzevari University, Sabzevar, 96179-76487, IranEhsanKoushkiDepartment of Physics, Faculty of Sciences, Hakim Sabzevari University, Sabzevar, 96179-76487, IranJournal Article20240522The distance between conduction and valence bands which is known as bandgap energy is an important factor for semiconductors and is different in various materials. The bandgap energy determines the electrical and optical properties of semiconductors and has a direct effect on the performance of diodes and transistors. In this article, the effect of bandgap energy of the channel region of a npn transistor has been investigated and its effects on capacitance and conductivity, threshold voltage, and the <em>I</em>on-<em>I</em>off ratio were studied. An npn transistor is designed and then the bandgap energy is changed between 0.8 eV and 2.2 eV with a step of 0.2 eV, and subthreshold slope and other electrical quantities have been obtained numerically. By comparing the results, the best performance of the transistor can be obtained. This simulation was done with Silvaco Atlas software. This study can open new windows in design of transistor devices.https://ppam.semnan.ac.ir/article_8846_9be855a3c67e91846f607f6448574636.pdfSemnan University PressProgress in Physics of Applied Materials2783-47944220240701Electronic and spintronic transport in gapped graphene-based FG/SG/FG junctions115121885410.22075/ppam.2024.34105.1100ENHosseinKarbaschiFaculty of science, Mahallat Institute of Higher Education, Mahallat 37811-51958, IranGholamrezaRashediDepartment of Physics, University of Isfahan, Isfahan 81746-73441, IranJournal Article20240512This study delves into the transport properties of ferromagnetic-superconductor-ferromagnetic (FSF) junctions using graphene, where ferromagnetism and superconductivity are induced via proximity effect. The investigation focuses on the influence of ferromagnetic exchange energy and graphene energy bandgap. Fabricated on SiC and BN substrates, the graphene-based junctions treat charge carriers as massive relativistic particles. Utilizing a four-dimensional Dirac-Bogoliubov-de Gennes equation with tailored boundary conditions, the study calculates normal and Andreev reflection probabilities, alongside charge and spin conductances. Notably, oscillatory patterns in normal and Andreev reflection coefficients highlight the prevalence of Andreev reflection at lower energies, transitioning to normal reflection at higher energies. Conductivity trends with ferromagnetic exchange energy display a decline followed by an upturn beyond a critical point. The graphene energy bandgap notably influences Giant Magnetoresistance (GMR), with larger bandgaps yielding higher GMR magnitudes. These findings provide valuable insights into the intricate interplay among ferromagnetism, superconductivity, and graphene's electronic properties within FSF junctions. This understanding offers promising avenues for advancing graphene-based electronic and spintronic devices.https://ppam.semnan.ac.ir/article_8854_c3c3a73ce42b413dfbb539568c1479da.pdfSemnan University PressProgress in Physics of Applied Materials2783-47944220240701Simulation of size effects on the optical properties of KTP nanoparticles123133885710.22075/ppam.2024.33978.1098ENNematollahAbdi ValikchaliFaculty of Physics, Semnan University, P.O.Box 35195-363, Semnan, IranMajidJafar TafreshiFaculty of Physics, Semnan University, P.O.Box 35195-363, Semnan, IranFatemehShariatmadar TehraniFaculty of Physics, Semnan University, P.O.Box 35195-363, Semnan, IranJournal Article20240502KTiOPO<sub>4</sub> (KTP) is a non-linear optical crystal with high non-linear optical coefficients and an optical damage threshold that has wide applications in optical devices. The optical properties of KTP nanoparticles are critical in nanotechnology. This study employs COMSOL Multiphysics software and the finite element method (FEM) in order to examine the effects of particle size (10 to 100 nm) on the optical properties of spherical KTP nanoparticles, including refractive index dispersion, scattering cross-section, band gap energy, and cut-off wavelength. The obtained results were compared with the available experimental data. The results of this research showed that the refractive index dispersion and scattering cross-section for KTP nanoparticles follow the FEM model and Mei's theory for spherical nanoparticles. For radiated light with a specific wavelength, decrease in the size of KTP nanoparticles causes a decrease in the scattering cross-section, refractive index, and absorption edge wavelength. By decreasing the particle size from 100 nm to 50 nm, the refractive index remained almost constant at 1.81 and decreased slightly with further decrease in particle size to 20 nm. Also,<span style="text-decoration: line-through;"> </span>reducing the particle size below 20 nm decreased the refractive index to 1.80. The band gap energy of KTP nanoparticles increased from 3.9 eV to 6.27 eV as the particle size decreased from 100 nm to 10 nm. However, a significant increase in band gap energy was observed when particle size decreased from 20 nm to 10 nm. The results of the simulation work were found to be consistent with the previous reports.https://ppam.semnan.ac.ir/article_8857_2bf0b8392733839d355674139680b4a7.pdfSemnan University PressProgress in Physics of Applied Materials2783-47944220240701GO/Co-MOF/NiMnCu nanocomposite as a possible candidate for the future of the supercapacitor generations135144897710.22075/ppam.2024.34800.1109ENElhamMazaheriDepartment of Solid State Physics, University of Mazandaran, Babolsar, Iran.AliBahariDepartment of Solid State Physics, University of Mazandaran, Babolsar, Iran.ShahramGhasemiFaculty of Chemistry, University of Mazandaran, Babolsar, Iran.Journal Article20240719Some issues of the electroactive materials in supercapacitor devices, such as low specific surface area, lower electron/ion transportation, and undesirable conductivity, are threatening the current components of supercapacitor devices. Higher surface adsorption sites and specific surface area in the porous structures could contribute to the enhanced performance. The porous network facilitates higher ion diffusion, higher cyclic retention (which are not discussed in the present work) and improved electrochemical interactions. Improving these factors can cause more occupation sites, more connections between electrode-electrolyte, which means more reaction places for charge storage in the supercapacitor devices. In the present study, we synthesized graphene oxide (<em>GO</em>), <em>Co</em>- metal-organic framework (<em>MOF</em>) / <em>NiMnCu</em> nanocomposite on nickel foam (<em>NF</em>) (<em>GO/ CoMOF/ NiMnCu</em>) samples with solvothermal method. Our findings show that <em>GO/ CoMOF/ NiMnCu</em> sample has higher specific surface area, good porosity than their individual components. Thus, <em>GO/ CoMOF/ NiMnCu</em> sample has much larger specific capacitance, which can affect the sample structure and improve electrical characteristics, yield to more occupation sites and/or specific surface area, enhancement of the carrier (electrons, ions) transportation in the supercapacitor devices. Therefore, here XRD patterns confirmed metal hydroxides, <em>Co-MOF</em> and <em>GO</em> formations, and Brunauer-Emmett-Teller<em> (BET)</em> results revealed higher pore volume which can cause faster and better transportation of ions, or better performance of sample (<em>GO/ CoMOF/ NiMnCu</em>) as a possible material for the next supercapacitor devices.https://ppam.semnan.ac.ir/article_8977_02cef1ec93b1156b7ac92025ac85ca0f.pdfSemnan University PressProgress in Physics of Applied Materials2783-47944220240701Pseudocapacitive performance of cobaltite and nickel cobaltite electrodes fabricated by layer-by-layer chemical deposition method145151897810.22075/ppam.2024.34952.1111ENMahdiKazaziDepartment of Materials Engineering, Faculty of Engineering, Malayer University, Malayer, IranMohsenMirzaieDepartment of Materials Engineering, Faculty of Engineering, Malayer University, Malayer, IranJavadRahimi JunaqaniDepartment of Materials Engineering, Faculty of Engineering, Malayer University, Malayer, IranJournal Article20240806The development of efficient strategies for fabricating binder-free electrodes to electrochemical energy storage applications is of interest. Here, a novel approach of layer-by-layer chemical deposition was proposed for the preparation of binderless cobaltite (Co<sub>3</sub>O<sub>4</sub>) and nickel cobaltite (NiCo<sub>2</sub>O<sub>4</sub>) pseudocapacitive electrodes. The structure and morphology of the electrodes were obtained by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) examinations. The results demonstrated that the active materials were uniformly deposited on the surface of the nickel current collector. Also, a more porous structure was obtained in the case of nickel cobaltite electrode, which could improve the diffusion of ions to the active materials. Pseudocapacitive performance of the electrodes was obtained by cyclic voltammetry (CV), galvanostatic charge-discharge (GCD) and electrochemical impedance spectroscopy (EIS) measurements. The results demonstrated that the nickel cobaltite electrode exhibited superior charge storage performance including a high specific capacitance of 1251 F g<sup>-1</sup> at 1 A g<sup>-1</sup> and good rate capability (89.7% capacitance retention with a 10-fold increase in the current rate), which were higher than those for the cobaltite electrode.https://ppam.semnan.ac.ir/article_8978_7df92545243211d3d0599482cc590152.pdfSemnan University PressProgress in Physics of Applied Materials2783-47944220240701Investigating the Influence of Single Fe and Two Fe co-doping on the Structural and Magnetic Properties of Monolayer Pt2Te4 Pentagonal: A First Principle Study153159898310.22075/ppam.2024.34081.1099ENMojtabaGholamiDepartment of Physic, Payame Noor University, Tehran, IranJournal Article20240508The manipulation of magnetic characteristics in 2D materials is essential for their utilization in spintronic and magnetic devices. this study was carried out to investigate the doping process involving a single Fe dopant and the co-doping of two Fe impurities at the Pt site within the Pt<sub>2</sub>Te<sub>4</sub> monolayer. The examination revealed that the introduction of a single iron (Fe) atom and a pair of Fe atoms into the non-magnetic semiconductor monolayer of Pt<sub>2</sub>Te<sub>4</sub> leads to magnetic moments measuring 2 µ<sub>B</sub> and 4µ<sub>B</sub>, respectively. The origin of magnetic moments is observed predominantly around Fe-3d orbitals. In the instances of co-doping involving Fe-Fe substitution, four distinct configurations were examined. One of the configurations, specifically FeFe (1), was identified as the most stable due to its minimal energy level. This configuration also demonstrates a ferromagnetic coupling mechanism between the two Fe substitutions, a phenomenon that can be justified by the significant magnetic moment of 4µ<sub>B</sub>.https://ppam.semnan.ac.ir/article_8983_43476637603c52910219796e099e08ba.pdfSemnan University PressProgress in Physics of Applied Materials2783-47944220240701Explaining Unwanted Radial Oscillations in Single-Bubble Sonoluminescence161164900910.22075/ppam.2024.34837.1110ENMohamadMansouriDepartement of Physics, Khatam Al-Anbiah (PBUH) Air Defense University, 178181-3513 Tehran, Iran.FaroughMolaeiFaculty of Physics, K.N. Toosi University of Technology, 41, Shahid Kavian St., 15418-49611 Tehran, Iran.MajidVaezzadehFaculty of Physics, K.N. Toosi University of Technology, 41, Shahid Kavian St., 15418-49611 Tehran, Iran.Journal Article20240724This study presents a theoretical model to explain the bubble oscillation phenomenon that occurs after each flash in single-bubble sonoluminescence (SBSL). Our model reveals that these fluctuations are caused by the pressure effect of electrons produced during the flash, which interact with the surrounding fluid and cause bubble formation. The authors use the Monte Carlo method to calculate the number of released electrons and demonstrate that the amplitude and frequency of these oscillations can be reduced by manipulating the electron density and energy distribution. By controlling the released electrons, we show that it is possible to reduce the number of unwanted oscillations and increase the number of flashes that can be performed in a given time interval. The results provide new insights into the mechanism of SBSL and have implications for its application in various fields. Furthermore, our findings offer a method for reducing these oscillations, which limit the number of flashes that can be produced in a time interval, allowing for more efficient and reliable operation. The results from our theory are in good agreement with experimental results, validating our understanding of this phenomenon.https://ppam.semnan.ac.ir/article_9009_e31f35d34be862b6a452c3a5ad21cad6.pdfSemnan University PressProgress in Physics of Applied Materials2783-47944220240701Physical Properties of Electrode Materials of Rechargeable Lithium Ion Batteries via DFT Calculations165169902310.22075/ppam.2024.34656.1108ENZeinabSaeedi PourDepartment of Physics, Faculty of Science, Sahand University of Technology, Tabriz, P.O. Box: 513351996, IranJaafarJalilianDepartment of Physics, Faculty of Science, Yasouj University, Yasouj, P.O. Box: 7591874934, IranSeiyed Hamid RezaShojaeiDepartment of Physics, Faculty of Science, Sahand University of Technology, Tabriz, P.O. Box: 513351996, IranJournal Article20240709We performed a density functional theory (DFT) study on Li<sub>2</sub>VO<sub>2</sub>F to assess its electronic structure. All calculations were conducted employing the plane wave pseudopotentials basis set. Electronic structure of Li<sub>2</sub>VO<sub>2</sub>F was calculated in the framework of the Hubbard U density functional theory (DFT+U) method. The geometry of the unit cell was optimized in triclinic and monoclinic phases. The effect of adding the Hubbard parameter on the band structure as well as the partial density of states were investigated and the contribution of different atoms in the total density of states was investigated separately. Hubbard parameter added the electron-electron interaction in the calculations, which has led to an increase in the bandgap value and more accurate results compared to the existing experimental results. It was observed that the monoclinic phase exhibits a smaller gap bandwidth than the triclinic phase. Also the calculated band structure indicates the presence of an indirect gap in both phases of this compound.https://ppam.semnan.ac.ir/article_9023_3be662402742b193dad1621e9630d24f.pdfSemnan University PressProgress in Physics of Applied Materials2783-47944220240701Investigating the Performance of TIN-Based Perovskite Solar Cell with Zinc Selenide as an ETM and Graphene as an HTM Using SCAPS-1D171181904710.22075/ppam.2024.34301.1106ENIjeoma NaomiUkorahDepartment of Physics, Nigerian Defence Academy, Kaduna, Nigeria.Adeyemi JoshuaOwolabiDepartment of Physics, Nigerian Defence Academy, Kaduna, Nigeria.HarunaAliDepartment of Physics, Nigerian Defence Academy, Kaduna, Nigeria.Muhammed YusufOnimisiDepartment of Physics, Nigerian Defence Academy, Kaduna, Nigeria.RATafidaDepartment of Physics, Nigerian Defence Academy, Kaduna, Nigeria.Awujoola JOlalekanDirectorate of information and communication Technology, NDA, Kaduna, Nigeria.Hassan MuhammedGamboDepartment of Physics, Nigerian Defence Academy, Kaduna, Nigeria.Sakinate LUsmanDepartment of Physics, Nigerian Defence Academy, Kaduna, Nigeria.Akusu OChristianaDepartment of Physics, Nigerian Defence Academy, Kaduna, Nigeria.Jessica MUkwenyaDepartment of Physics, Nigerian Defence Academy, Kaduna, Nigeria.Bankole JAkinadeDepartment of Physics, Federal University lafia, Nasarawa State. Nigeria.RUUgbeDepartment of Physics, Nigerian Defence Academy, Kaduna, Nigeria.Journal Article20240601In this study, a numerical analysis was conducted on a Sn-based planner heterojunction perovskite device. Structure of Glass/TCO/ETL/CH3NH3SnI3/HTL/Metal was performed by using the solar cell device simulator SCAPS 1D. The absorber layer is a tin-based methylammonium tin iodide (CH3NH3SnI3), while the electron transport layer (ETL), ZnSe, and a hole transport layer (HTL) Graphene, were used. To optimize the device, the thickness of the ETL, absorber, and HTL doping concentrations were varied, and their impact on device performance was evaluated. The effect of temperature variations was also investigated. The optimum absorber layer thickness was found at 950 nm for the proposed structure. The acceptor concentration improved the device performance significantly. The optimized solar cell achieved a PCE, Voc, Jsc, and FF of 25.40%, 0.959 V, 32.863 mA/cm<sup>2</sup>, and 80.60%, respectively. The proposed cell structure also possesses excellent performance under high operating temperatures indicating great promise for eco-friendly, low-cost solar energy harvesting.https://ppam.semnan.ac.ir/article_9047_790d16e8f79710fedb45b8e6eb24e166.pdfSemnan University PressProgress in Physics of Applied Materials2783-47944220240701Structural, electronic and magnetic properties of Fe2TiP full-Heusler compound: A first-principles study183188908610.22075/ppam.2024.34112.1101ENRezaSarhaddiDepartment of Physics, Faculty of Sciences, University of Birjand, Birjand, IranJournal Article20240512This study examined the electronic, magnetic, and structural properties of Fe2TiP full-Heusler compound, using the pseudo-potential plane wave (PP-PW) formalism based on density functional theory (DFT). Energetically, the AlCu2Mn-type structure of Fe2TiP had greater stability in comparison with the CuHg2Ti-type structure and show the half-metallic (HF) ferrimagnetic behavior. Based on the results at the lattice constant of 5.65 Å, the total magnetic moment (Mtot) was 1 μB/unit cell; this finding is consistent with the Slater-Pauling (SP) rule. The minority spin band exhibited a semiconductor behavior (spin-flip gap of 0.21 eV; gap of 0.35 eV), whereas the majority spin band was metallic. The origin of half-metallicity and appearance of the minority band gap were discussed using the band structure calculations and density of states (DOS). In addition, dependence of magnetic properties on the lattice constant was evaluated. In the lattice constant range of 5.55-5.85 Å, the Fe2TiP compound can retain the half-metallicity. Therefore, the half-metallic feature was not influenced by the lattice distortion, and this material seems to have potential applications in future spintronics devices.https://ppam.semnan.ac.ir/article_9086_441089dfdacbfd5a90037d0fa8875526.pdfSemnan University PressProgress in Physics of Applied Materials2783-47944220240701Influence of bismuth substitution on structural and optical properties of CuFe2-xBixO4 spinel structure189195909910.22075/ppam.2024.35097.1113ENHamidHamrahSchool of Physics, Damghan University, Damghan, IranAhmadGholizadehSchool of Physics, Damghan University, Damghan, IranJournal Article20240822CuFe2-xBixO4 (x=0.0-2.0) spinel structures were synthesized using a sol-gel auto-combustion method. The effects of Bi3+ substitution on structural and optical properties were investigated using X-ray diffraction, Fourier-transformed infrared spectroscopy, and UV-vis spectroscopy. A phase transition was observed in CuFe2-xBixO4 with increasing Bi content, leading to enhanced lattice parameters a and c due to Bi3+ larger ionic radius. Crystallite size decreased as Bi substitution increased, attributed to the reduced mobility and higher mass of Bi3+ ions. The tunability of structural and optical properties was achieved through controlled Bi substitution, with optical band gap energy increasing due to local distortions from Bi3+ ions in the CuFe2O4 lattice. CuFe2-xBixO4spinel structures show promise for applications in photocatalysis, gas sensors, pigments, and magnetic materials. We will clearly outline the existing knowledge in the field of Bi3+-substituted copper ferrite nanoparticles, focusing on the need for a comprehensive understanding of the structural and optical property changes resulting from Bi3+ substitution.https://ppam.semnan.ac.ir/article_9099_d4f2de4f2cf5d0d625d38fd99bc33cdd.pdf