Semnan University Press Progress in Physics of Applied Materials 2783-4794 4 2 2024 07 01 Electronic and spintronic transport in gapped graphene-based FG/SG/FG junctions 115 121 8854 10.22075/ppam.2024.34105.1100 EN Hossein Karbaschi Faculty of science, Mahallat Institute of Higher Education, Mahallat 37811-51958, Iran 0000-0003-0980-4745 Gholamreza Rashedi Department of Physics, University of Isfahan, Isfahan 81746-73441, Iran Journal Article 2024 05 12 This study delves into the transport properties of ferromagnetic-superconductor-ferromagnetic (FSF) junctions using graphene, where ferromagnetism and superconductivity are induced via proximity effect. The investigation focuses on the influence of ferromagnetic exchange energy and graphene energy bandgap. Fabricated on SiC and BN substrates, the graphene-based junctions treat charge carriers as massive relativistic particles. Utilizing a four-dimensional Dirac-Bogoliubov-de Gennes equation with tailored boundary conditions, the study calculates normal and Andreev reflection probabilities, alongside charge and spin conductances. Notably, oscillatory patterns in normal and Andreev reflection coefficients highlight the prevalence of Andreev reflection at lower energies, transitioning to normal reflection at higher energies. Conductivity trends with ferromagnetic exchange energy display a decline followed by an upturn beyond a critical point. The graphene energy bandgap notably influences Giant Magnetoresistance (GMR), with larger bandgaps yielding higher GMR magnitudes. These findings provide valuable insights into the intricate interplay among ferromagnetism, superconductivity, and graphene's electronic properties within FSF junctions. This understanding offers promising avenues for advancing graphene-based electronic and spintronic devices. https://ppam.semnan.ac.ir/article_8854_bd6fd20524553da5f0504d31e4134500.pdf