Semnan University Press Progress in Physics of Applied Materials 2783-4794 2 1 2022 01 01 Structural, electrical and optical properties of SnO2: B transparent semiconducting thin films 1 10 6851 10.22075/ppam.2022.26130.1023 EN A. S. Shamsipoor School of Physics, Damghan University, Damghan, Iran Mohammad Mehdi Bagheri-Mohagheghi School of Physics, Damghan University, Damghan, Iran Elham Mokaripoor School of Physics, Damghan University, Damghan, Iran Journal Article 2022 02 17 Boron (B) is considered as an important impurity in semiconductor physics and optoelectronic devices, especially to produce p-type silicon (p-Si). In this paper, we investigate the effect of Boron doping on the structural, electrical, optical, and photo-sensitivity properties of tin oxide (SnO₂) semiconductor thin films. Boron doped tin oxide (SnO₂: B) thin films were deposited on glass substrates at T_s=500 ^ͦ C for different atomic concentration of x=[B/Sn] = 0, 0.02, 0.04, 0.08, 0.10, 0.20, 0.30, and 0.50 by spray pyrolysis technique.The results of X-ray diffraction (XRD) analysis show the tetragonal rutile SnO₂<strong> </strong>structure with orientation along the (211) plane. The films have polycrystalline structure with granular and island-like grains morphology by Field-Emission Electron Microscope (FE-SEM). The SnO₂:B films have shown n-type conductivity and decreasing - increasing behavior of electrical resistivity with B-doping for x ≤ 0.04 and x> 0.04, respectively. Also, carrier concentrations were obtained in the order of 10¹⁸-10²⁰ cm^-3. Average optical transmittance of SnO₂:B thin films changed in the range of 65% to 87% in the visible region and SnO₂:B (x=0.08) sample has highest transmittance. The optical gap of films was obtained in the range of 3.47-3.87 eV. From the photoconductive results, the x=0.50 film has exhibited the most optical sensitivity under light radiation. https://ppam.semnan.ac.ir/article_6851_1a0cc60b77e33ff1c294c4238499e00a.pdf